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Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
27 - 32 GHz 1W Power Amplifier
Key Features
* * * * * *
Chip Dimensions 2.7 mm x 1.4 mm x 0.1mm
TGA1172-SCC
0.25 um pHEMT Technology 16 dB Nominal Gain 29 dBm Nominal P1dB 36dBm OTOI typical at 28GHz Nominal Input/Output RL < -10 dB Bias 6 - 7V @ 630 mA
Primary Applications
* * * Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com
Product Description
The TriQuint TGA1172-SCC is a three stage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA1172 is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS and Ka band satellite ground terminals. The three stage design consists of a 600um input stage driving a 2 x 600um interstage followed by a 4 x 600um output stage. The TGA1172 provides 29 dBm nominal output power at 1dB compression across 27-32GHz. Typical small signal gain is 16 dB with typical Input/Output Return Loss of <-10dB. The TGA1172 requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. Output Power at P1dB
32 31
P1dB (dBm)
Wideband Small Signal Gain
15 10
Return Loss (dB)
25
6V, 630 mA
5 0 -5 -10 -15 -20 10 15 S11
S21
15 5
Gain (dB)
-5 -15 -25 S22 20 25 30 35 -35 -45 40
Frequency (GHz)
Output Third Order Intercept
40 39 38 37 36 35 34 33 32 31 30 26 27 28 29 30
30 29 28 27 26 25 26 27 28 29 30 31 32
Frequency (GHz)
Output TOI (dBm)
6V, 630 mA
6V, 630 mA
(
)
31
32
33
Frequency (GHz) 1
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs TABLE I
MAXIMUM RATINGS SYMBOL V I I
+ + -
TGA1172-SCC
NOTES 1/ 1/
PARAMETER 4/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT NEGATIVE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
VALUE 8V 840 mA 35.2 mA 23 dBm 5.0 W 150 0C 320 C -65 to 150 0C
0
PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
2/ 3/
Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings represent the maximum operable values for the device.
TABLE II DC SPECIFICATIONS (100%) (TA = 25 C Nominal) NOTES SYMBOL IDSS1 GM1 1/ 1/ 1/ 1/ 1/ 1/ 1/ 1/ 1/ |VP1| |VP2-3| |VP4-7| |VBVGD1| |VBVGD2-3| |VBVGD4-7| |VBVGS1| |VBVGS2-3| |VBVGS4-7| TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD STD STD STD STD 60 132 0.5 0.5 0.5 13 13 13 13 13 13 LIMITS MAX 282 318 1.5 1.5 1.5 30 30 30 30 30 30 mA mS V V V V V V V V V UNITS
1/ 2/
VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer).
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
TGA1172-SCC
TABLE IV RF SPECIFICATIONS (T A = 25C Nominal) NOTE TEST MEASUREMENT CONDITIONS 6V @ 630mA 27 - 32 GHz 28 - 32 GHz VALUE MIN 13 27 TYP 16 29 MAX dB dBm UNITS
SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE OUTPUT THIRD ORDER INTERCEPT
27 - 32 GHz
10
dB
27 - 32 GHz
10
dB
28 GHz
36
dBm
TABLE V RELIABILITY DATA PARAMETER RqJC Thermal resistance (channel to backside of carrier plate) BIAS CONDITIONS VD (V) ID (mA) 6 630 PDISS (W) 3.78 RqJC (C/W) 21.35 TCH (C) 135.7 TM (HRS) 3.5E6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 55C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
TGA1172 Average On-Wafer Small Signal S-Parmeters Sample Size = 23K devices TGA1172-SCC
26 24 22 20 18 16 14 12 10 8 6 4 2 0 27 28 29 30 31 32
Frequency (GHz)
Gain (dB)
Input Return Loss (dB)
0 -5 -10 -15 -20 -25 -30 27 28 29 30 31 32
Frequency (GHz)
0 -5
Output Return Loss (dB)
-10 -15 -20 -25 -30 -35 27 28 29 30 31 32
Frequency (GHz)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
TGA1172-SCC
TGA1172 Single tone pout and IMD3 vs Pin
Frequency = 28GHz, 6V, 630 mA 25 10
20
0
15
-10
10 SCL Power 5 IMD3
-20
-30
0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5
-40
TGA1172 Single tone pout and IMD3 vs Pin
Frequency = 31GHz, 6V, 630 mA 25 10
20
0
15
-10
10 SCL Power 5 IMD3
-20
-30
0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5
-40
IMD3 (dBm)
Pout (dBm)
IMD3 (dBm)
Pout (dBm)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
TGA1172-SCC
Mechanical Drawing
Vd1 Vg2 RF IN Vd2 Vg3 RF OUT Vd3
600mm
1200mm
2400mm
Vg1 Vd1
Vg2 Vd2
Vg3 Vd3
Amplifier Topology
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
TGA1172-SCC
Vd
100pF
0.01mF
Rf in
5mil Ribbon
Rf out
5mil Ribbon
100pF
0.01mF
Vg
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
7
Not Recommended for New Designs
Product Datasheet
September 26, 2002
TriQuint Recommends the TGA4509-EPU be used for New Designs
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
TGA1172-SCC
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
8

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